Datasheet > IRHNA3260

IRHNA3260

更新时间： 2024-11-17 23:58:55

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页数	文件大小	规格书
8页	108K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 43A I(D) \| SMT

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中文翻译

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数据手册

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IRHNA3260 数据手册

PD - 91397B

IRHNA7260

200V, N-CHANNEL

REF: MIL-PRF-19500/664

RAD-Hard^™HEXFET^®

MOSFETTECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA7260 100K Rads (Si)

IRHNA3260 300K Rads (Si)

IRHNA4260 600K Rads (Si)

0.07Ω

43A JANSR2N7433U

43A JANSF2N7433U

43A JANSG2N7433U

43A JANSH2N7433U

IRHNA8260 1000K Rads (Si) 0.07Ω

SMD - 2

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

172

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

300

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

V/ns

dv/dt

5.7

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s)

3.3 (Typical)

For footnotes refer to the last page

www.irf.com

5/4/2000

12 3 4 5 6 7 8

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