是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED; AVALANCHE RATED | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 88 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN93230 | ETC |
获取价格 |
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package | |
IRHN93250 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN93250PBF | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met | |
IRHNA3064 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNA3160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA3160PBF | INFINEON |
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Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA3260 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT | |
IRHNA3Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) | |
IRHNA4064 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNA4064PBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met |