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IRHN9230

更新时间： 2024-11-17 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 97K
描述
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

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中文翻译

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IRHN9230 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.38其他特性：RADIATION HARDENED
配置：SINGLE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：35 A最大漏极电流 (ID)：6.4 A
最大漏源导通电阻：0.8 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：250 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

IRHN9230 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1445  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN9230  
P-CHANNEL  
RAD HARD  
-200 Volt, 0.8Ω, RAD HARD HEXFET Product Summary  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
Part Number  
BVDSS  
-200V  
RDS(on)  
ID  
and breakdown voltage stability at total radiation doses as  
IRHN9230  
0.8Ω  
-6.5A  
high as 105 Rads (Si). Underidentical pre- and post-radiation  
test conditions, International Rectifier’s P-Channel RAD  
HARD HEXFETs retainidenticalelectrical specifications up  
Features:  
to 1 x 105 Rads (Si) total dose. No compensation in gate  
drive circuitry is required. In addition these devices are also  
capable of surviving transient ionization pulses as high as  
1 x 1012 Rads (Si)/Sec, and return to normal operation within  
a few microseconds. Single Event Effect (SEE) testing of  
International Rectifier P-Channel RAD HARD HEXFETs has  
demonstrated virtual immunity to SEE failure. Since the  
P-Channel RAD HARD process utilizes International  
Rectifier’s patented HEXFETtechnology, the user can expect  
the highest quality and reliability in the industry.  
n Radiation Hardened up to 1 x 105 Rads (Si)  
n Single Event Burnout (SEB) Hardened  
n Single Event Gate Rupture (SEGR) Hardened  
n Gamma Dot (Flash X-Ray) Hardened  
n Neutron Tolerant  
n Identical Pre- and Post-Electrical Test Conditions  
n Repetitive Avalanche Rating  
n Dynamic dv/dt Rating  
P-Channel RAD HARD HEXFET transistors also feature all  
of the well-established advantages of MOSFETs, such as  
voltage control,very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
n Simple Drive Requirements  
n Ease of Paralleling  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high-energy pulse circuits in space and  
n Hermetically Sealed  
n Surface Mount  
weapons environments.  
n Light-weight  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
= -12V, T = 25°C Continuous Drain Current  
C
IRHN9230  
-6.5  
Units  
I
D
@ V  
GS  
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
-4.0  
GS  
C
A
I
Pulsed Drain Current  
-26  
DM  

P
@ T = 25°C  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
75  
W
D
C
0.6  
W/K  
V
ꢀ
V
±20  
GS  
E
Single Pulse Avalanche Energy  
150  
mJ  
A
AS  
‚
I
Avalanche Current  
-6.5  
AR  

E
AR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.5  
mJ  

-5.0  
V/ns  
ƒ
T
Operating Junction  
-55 to 150  
J
oC  
T
STG  
Storage Temperature Range  
Package Mounting  
Surface Temperature  
Weight  
300 (for 5 seconds)  
2.6 (typical)  
g
Notes: See page 4  
To Order  
 
 
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中文翻译

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