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IRHN9150SCSPBF PDF预览

IRHN9150SCSPBF

更新时间： 2024-11-18 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 132K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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IRHN9150SCSPBF 数据手册

 浏览型号IRHN9150SCSPBF的Datasheet PDF文件第2页浏览型号IRHN9150SCSPBF的Datasheet PDF文件第3页浏览型号IRHN9150SCSPBF的Datasheet PDF文件第4页浏览型号IRHN9150SCSPBF的Datasheet PDF文件第5页浏览型号IRHN9150SCSPBF的Datasheet PDF文件第6页浏览型号IRHN9150SCSPBF的Datasheet PDF文件第7页 
PD - 90885F  
IRHN9150  
JANSR2N7422U  
100V, P-CHANNEL  
REF: MIL-PRF-19500/662  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
RAD Hard™ HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7422U  
JANSF2N7422U  
IRHN9150  
100K Rads (Si)  
0.080Ω  
0.080Ω  
-22A  
-22A  
IRHN93150 300K Rads (Si)  
SMD-1  
International Rectifier’s RADHard HEXFETTM  
technology provides high performance power  
MOSFETs for space applications. This technology  
has over a decade of proven performance and  
reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single  
Event Effects (SEE). The combination of low Rdson  
and low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the  
well established advantages of MOSFETs such as  
voltage control, fast switching, ease of paralleling  
and temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
LowTotal Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-22  
-14  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
-88  
DM  
@ T = 25°C  
P
D
150  
W
W/°C  
V
C
1.2  
V
GS  
Gate-to-SourceVoltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-22  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
AR  
dv/dt  
-23  
V/ns  
T
-55 to 150  
J
oC  
g
T
STG  
StorageTemperature Range  
PCKG Mounting Surface Temp.  
Weight  
300 ( for 5s)  
2.6 (typical)  
For footnotes refer to the last page  
www.irf.com  
1
04/07/04  
12345678

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