Datasheet > JANSF2N7422U

JANSF2N7422U

更新时间： 2024-09-10 12:33:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	132K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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中文翻译

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JANSF2N7422U 数据手册

PD - 90885F

IRHN9150

JANSR2N7422U

100V, P-CHANNEL

REF: MIL-PRF-19500/662

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

JANSR2N7422U

JANSF2N7422U

IRHN9150

100K Rads (Si)

0.080Ω

-22A

IRHN93150 300K Rads (Si)

SMD-1

International Rectifier’s RADHard HEXFET^TM

technology provides high performance power

MOSFETs for space applications. This technology

has over a decade of proven performance and

reliability in satellite applications. These devices have

been characterized for both Total Dose and Single

Event Effects (SEE). The combination of low Rdson

and low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the

well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

LowTotal Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-22

-14

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

-88

@ T = 25°C

150

W/°C

1.2

Gate-to-SourceVoltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

-22

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

dv/dt

-23

V/ns

-55 to 150

^oC

STG

StorageTemperature Range

PCKG Mounting Surface Temp.

Weight

300 ( for 5s)

2.6 (typical)

For footnotes refer to the last page

www.irf.com

04/07/04

12 3 4 5 6 7 8

中文翻译

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JANSF2N7422U 替代型号

型号	品牌	替代类型	描述	数据表
JANSR2N7422U	INFINEON	完全替代	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHN93150	INFINEON	完全替代	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHN9150	INFINEON	完全替代	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)

与JANSF2N7422U相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7423	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
JANSF2N7423U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSF2N7424	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
JANSF2N7424U	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 60V, 0.048ohm, 1-Element, P-Channel, Silicon, Met
JANSF2N7425	INFINEON	获取价格	Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300
JANSF2N7425U	INFINEON	获取价格	Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(S
JANSF2N7426	INFINEON	获取价格	Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300
JANSF2N7426U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSF2N7431	INFINEON	获取价格	Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 kra
JANSF2N7431D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met

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