Datasheet > JANSF2N7468U2A

JANSF2N7468U2A

更新时间： 2024-09-15 11:10:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1229K
描述
Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL

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JANSF2N7468U2A 数据手册

PD-97922A

IRHNS57064

JANSR2N7468U2A

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

REF: MIL-PRF-19500/673

TECHNOLOGY

Product Summary

Part Number

IRHNS57064

IRHNS53064

IRHNS55064

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7468U2A

JANSF2N7468U2A

JANSG2N7468U2A

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

75A*

5.6m

SupIR-SMD

Description

Features

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 Surface Mount

controllers.

These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

75*

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

75*

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

300

250

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.0

± 20

500

W/°C

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.4

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2020-04-13

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与JANSF2N7468U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7469U2	INFINEON	获取价格	Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSF2N7469U2A	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7470T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSF2N7470T1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
JANSF2N7471T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
JANSF2N7479U3	INFINEON	获取价格	Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(
JANSF2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSF2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSF2N7483T3	INFINEON	获取价格	Rad hard, 60V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 300 kra

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