是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-CSFM-P3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.39 |
其他特性: | ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 110 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-CSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Qualified | 参考标准: | MIL-19500; RH - 300K Rad(Si) |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSF2N7484T3 | INFINEON |
获取价格 |
Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 300 kr | |
JANSF2N7491T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSF2N7492T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSF2N7493T2 | INFINEON |
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Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 300 | |
JANSF2N7494U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSF2N7495U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSF2N7503U8 | INFINEON |
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Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 kra | |
JANSF2N7503U8C | INFINEON |
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Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
JANSF2N7506U8 | INFINEON |
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Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package | |
JANSF2N7506U8C | INFINEON |
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Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package |