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JANSF2N7483T3

更新时间: 2024-11-30 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1106K
描述
Rad hard, 60V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL

JANSF2N7483T3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-CSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.39
其他特性:ULTRA-LOW RESISTANCE雪崩能效等级(Eas):110 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-257AAJESD-30 代码:R-CSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):72 A
认证状态:Qualified参考标准:MIL-19500; RH - 300K Rad(Si)
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSF2N7483T3 数据手册

 浏览型号JANSF2N7483T3的Datasheet PDF文件第2页浏览型号JANSF2N7483T3的Datasheet PDF文件第3页浏览型号JANSF2N7483T3的Datasheet PDF文件第4页浏览型号JANSF2N7483T3的Datasheet PDF文件第5页浏览型号JANSF2N7483T3的Datasheet PDF文件第6页浏览型号JANSF2N7483T3的Datasheet PDF文件第7页 
IRHY57034CM (JANSR2N7483T3)  
PD-93825F  
Radiation Hardened Power MOSFET  
Thru-Hole (TO-257AA)  
60V, 18A, N-channel, R5 Technology  
Product Summary  
Features  
Single event effect (SEE) hardened  
BVDSS: 60V  
ID : 18A  
RDS(on),max : 40m  
QG,max : 45nC  
REF: MIL-PRF-19500/702  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
ESD rating: Class 1C per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
TO-257AA  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has  
over a decade of proven performance and reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHY57034CM  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
TO-257AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
JANSR2N7483T3  
IRHY53034CM  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
JANS  
COTS  
JANSF2N7483T3  
IRHY54034CM  
JANS  
COTS  
JANSG2N7483T3  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-05-26  
 
 
 
 
 

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