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JANSF2N7484T3

更新时间: 2024-09-15 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1565K
描述
Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL

JANSF2N7484T3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, S-XSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
雪崩能效等级(Eas):87 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):18 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AA
JESD-30 代码:S-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):72 A认证状态:Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSF2N7484T3 数据手册

 浏览型号JANSF2N7484T3的Datasheet PDF文件第2页浏览型号JANSF2N7484T3的Datasheet PDF文件第3页浏览型号JANSF2N7484T3的Datasheet PDF文件第4页浏览型号JANSF2N7484T3的Datasheet PDF文件第5页浏览型号JANSF2N7484T3的Datasheet PDF文件第6页浏览型号JANSF2N7484T3的Datasheet PDF文件第7页 
IRHY57130CM (JANSR2N7484T3)  
PD-93826G  
Radiation Hardened Power MOSFET  
Thru-Hole (TO-257AA)  
100V, 18A, N-channel, R5 Technology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: 100V  
ID : 18A  
RDS(on),max : 70m  
QG,max : 50nC  
REF: MIL-PRF-19500/702  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
ESD rating: Class 1C per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
TO-257AA  
Thermal management  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has  
over a decade of proven performance and reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHY57130CM  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
TO-257AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
JANSR2N7484T3  
IRHY53130CM  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
JANS  
COTS  
JANSF2N7484T3  
IRHY54130CM  
JANS  
COTS  
JANSG2N7484T3  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-05-26  
 
 
 
 
 

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