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JANSF2N7431U

更新时间: 2024-11-30 14:56:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1297K
描述
Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL

JANSF2N7431U 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-CBCC-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
认证状态:Qualified参考标准:MIL-19500/664
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSF2N7431U 数据手册

 浏览型号JANSF2N7431U的Datasheet PDF文件第2页浏览型号JANSF2N7431U的Datasheet PDF文件第3页浏览型号JANSF2N7431U的Datasheet PDF文件第4页浏览型号JANSF2N7431U的Datasheet PDF文件第5页浏览型号JANSF2N7431U的Datasheet PDF文件第6页浏览型号JANSF2N7431U的Datasheet PDF文件第7页 
IRHNA7064 (JANSR2N7431U)  
PD-91416F  
Radiation Hardened Power MOSFET  
Surface Mount (SMD-2)  
60V, N-channel, Rad Hard HEXFETTechnology  
Features  
Product Summary  
Single event effect (SEE) hardened  
Low RDS(on)  
Part number: IRHNA7064 (JANSR2N7431U),  
IRHNA3064 (JANSF2N7431U),  
IRHNA5064 (JANSG2N7431U)  
REF: MIL-PRF-19500/664  
Radiation level: 100 krad (Si),  
300 krad (Si), 500 krad (Si)  
RDS(on),max : 15 m  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Surface mount  
ID : 75A*  
Light weight  
ESD rating: Class 3B per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
SMD-2  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Ordering options  
Package  
Part number  
IRHNA7064  
IRHNA7064SCS  
Screening Level  
COTS  
TID Level  
SMD-2  
100krad(Si)  
100krad(Si)  
100krad(Si)  
300krad(Si)  
300krad(Si)  
500krad(Si)  
500krad(Si)  
SMD-2  
S-Level  
JANS  
JANSR2N7431U  
IRHNA3064  
SMD-2  
SMD-2  
SMD-2  
SMD-2  
SMD-2  
COTS  
JANSF2N7431U  
IRHNA5064  
JANS  
COTS  
JANSG2N7431U  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2021-06-24  
 
 
 
 
 

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