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IRHN8250PBF

更新时间： 2024-11-18 20:01:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 297K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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IRHN8250PBF 数据手册

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PD - 90679G  
IRHN7250  
JANSR2N7269U  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
200V, N-CHANNEL  
REF:MIL-PRF-19500/603  
RAD-Hard™HEXFET® TECHNOLOGY  
Product Summary  
Part Number  
IRHN7250  
IRHN3250  
IRHN4250  
IRHN8250  
Radiation Level  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
1000K Rads (Si)  
RDS(on)  
0.1Ω  
0.1Ω  
0.1Ω  
0.1Ω  
ID  
QPL Part Number  
26A JANSR2N7269U  
26A JANSF2N7269U  
26A JANSG2N7269U  
26A JANSH2N7269U  
SMD-1  
International Rectifier’s RAD-HardTM HEXFET®  
technology provides high performance power  
MOSFETs for space applications. This technology  
has over a decade of proven performance and  
reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single  
Event Effects (SEE). The combination of low Rds(on)  
and low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
26  
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16  
104  
D
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
26  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (for 5 sec)  
2.6 (Typical)  
Package Mounting Surface Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
05/15/06  
1234567...12

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IRHN8250PBF 替代型号

型号 品牌 替代类型 描述 数据表
JANSH2N7269U INFINEON

功能相似

 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN8250 INFINEON

功能相似

 TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
IRHN7250 INFINEON

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 TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

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