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IRHN9130

更新时间： 2024-09-14 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 97K
描述
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)

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中文翻译

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IRHN9130 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, SMD-1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.25
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：190 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.325 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：75 W最大脉冲漏极电流 (IDM)：44 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHN9130 数据手册

 浏览型号IRHN9130的Datasheet PDF文件第2页浏览型号IRHN9130的Datasheet PDF文件第3页浏览型号IRHN9130的Datasheet PDF文件第4页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.886  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN9130  
P-CHANNEL  
RAD HARD  
-100 Volt, 0.30Ω, RAD HARD HEXFET  
Product Summary  
International Rectifier’s P-channel RAD HARD tech-  
nology HEXFETs demonstrate excellent threshold  
voltage stability and breakdown voltage stability at  
total radiation doses as high as 105 Rads (Si). Under  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHN9130  
-100V  
0.30Ω  
-11A  
identical pre- and post-radiation test conditions, In- Features:  
ternational Rectifier’s P-channelRAD HARD HEXFETs  
retain identical electrical specifications up to 1 x 105  
Rads (Si) total dose. No compensation in gate drive  
circuitry is required. These devices are also capable  
of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation  
within a few microseconds. Single Event Effect, (SEE),  
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
testing of International Rectifier’s P-channel RAD n Repetitive Avalanche Rating  
HARD HEXFETs has demonstrated virtual immunity  
to SEE failure. Since the P-channel RAD HARD pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
P-channel RAD HARD HEXFET transistors also fea-  
ture all of the well-established advantages of MOS-  
FETs, such as voltage control, very fast switching, ease  
of paralleling and temperature stability of the electri-  
cal parameters.  
n
n
n
n
n
n
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Lightweight  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
= -12V, T = 25°C Continuous Drain Current  
C
IRHN9130  
-11  
Units  
I
@ V  
D
GS  
A
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
-7.0  
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-44  
DM  
@ T = 25°C  
P
D
75  
W
W/KÄ  
V
C
0.60  
±20  
V
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
500  
mJ  
AS  
I
-11  
A
AR  
E
RepetitiveAvalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
-5.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mount Surface Temperature  
Weight  
STG  
oC  
300 (for 5 seconds)  
2.6 (typical)  
g
To Order  
 
 
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