5秒后页面跳转
捷配首页

Datasheet > IRHN7450SE
IRHN7450SE PDF预览

IRHN7450SE

更新时间： 2024-11-17 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
4页 87K
描述
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

阅读下载

中文翻译

获取价格

IRHN7450SE 技术参数

是否Rohs认证：不符合生命周期：Active
包装说明：HERMETIC SEALED, SMD-1, 3 PINReach Compliance Code：compliant
风险等级：5.13Is Samacsys：N
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.57 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：125 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：150 W最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHN7450SE 数据手册

 浏览型号IRHN7450SE的Datasheet PDF文件第2页浏览型号IRHN7450SE的Datasheet PDF文件第3页浏览型号IRHN7450SE的Datasheet PDF文件第4页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1313A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN7450SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET  
BVDSS  
RDS(on)  
ID  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
IRHN7450SE  
500V  
0.51Ω  
12A  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Lightweight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHN7450SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
12  
GS  
C
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
7.0  
A
D
GS  
C
I
Pulsed Drain Current➀  
Max. Power Dissipation  
48  
DM  
@ T = 25°C  
P
150  
W
W/K ➄  
V
D
C
Linear Derating Factor  
1.2  
V
Gate-to-Source Voltage  
Single PulseAvalanche Energy ➁  
Avalanche Current➀  
±20  
GS  
E
AS  
500  
mJ  
I
12  
A
AR  
E
RepetitiveAvalanche Energy➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
AR  
dv/dt  
3.5  
V/ns  
T
-55 to 150  
J
T
STG  
StorageTemperature Range  
oC  
g
(for 5 seconds)  
2.6 (typical)  
Package Mounting Surface Temperature  
Weight  
300  
To Order  
 
 
1234

中文翻译

下载PDF

与IRHN7450SE相关器件

型号 品牌 获取价格 描述 数据表
IRHN7450SESCS INFINEON

获取价格

 		Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)
IRHN7C50SE INFINEON

获取价格

 		TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHN7C50SEPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Me
IRHN8054 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN8130 INFINEON

获取价格

 		TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
IRHN8130PBF INFINEON

获取价格

 		暂无描述
IRHN8150 INFINEON

获取价格

 		TRANSISTOR N-CHANNEL
IRHN8230 INFINEON

获取价格

 		TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
IRHN8250 INFINEON

获取价格

 		TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
IRHN8250PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met

与IRHN7450SE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证