Datasheet > IRHN8230

IRHN8230

更新时间： 2024-11-17 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
14页	458K
描述
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)

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Provisional Data Sheet No. PD-9.822A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHN7230

IRHN8230

N-CHANNEL

MEGA RAD HARD

Product Summary

200 Volt, 0.40Ω, MEGARAD HARD HEXFET

Part Number

IRHN7230

BVDSS

200V

RDS(on)

0.40Ω

International Rectifier’s MEGA RAD HARD technology

HEXFETs demonstrate excellent threshold voltage sta-

bility and breakdown voltage stability at total radiation

doses as high as 1 x 10⁶Rads (Si). Under identical pre-

and post-radiation test conditions, International Rectifier’s

9.0A

IRHN8230

200V

RAD HARD HEXFETs retain identical electrical specifi- Features:

cations up to 1 x 10⁵Rads (Si) total dose.At 1 x 10⁶Rads

(Si) total dose, under the same pre-dose conditions, only

minor shifts in the electrical specifications are observed

and are so specified in table 1. No compensation in gate

drive circuitry is required. In addition, these devices are

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal operation

within a few microseconds. Single Event Effect (SEE)

testing of International Rectifier RAD HARD HEXFETs

has demonstrated virtual immunity to SEE failure. Since

the MEGA RAD HARD process utilizes International

Rectifier’s patented HEXFET technology, the user can

expect the highest quality and reliability in the industry.

■ Radiation Hardened up to 1 x 10⁶Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, au-

dio amplifiers and high-energy pulse circuits in space and

weapons environments.

Absolute Maximum Ratings

Pre-Radiation

Parameter

IRHN7230, IRHN8230

Units

@ V

= 12V, T = 25°C Continuous Drain Current

9.0

@ V

= 12V, T = 100°C Continuous Drain Current

6.0

Pulsed Drain Current ➀

@ T = 25°C

Max. Power Dissipation

0.60

W/K ➄

Linear Derating Factor

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

330 (see fig. 29)

9.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

7.5

dv/dt

5.0 (see fig. 30)

-55 to 150

V/ns

^oC

Storage Temperature Range

Package Mounting Surface Temperature

STG

(for 5 seconds)

2.6 (typical)

300

Weight

To Order

12 3 4 5 6 7...14

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与IRHN8230相关器件

型号	品牌	获取价格	描述	数据表
IRHN8250	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
IRHN8250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN8450	INFINEON	获取价格	HEXFET TRANSISTOR
IRHN8450PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRHN8450SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHN9130	INFINEON	获取价格	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)
IRHN9150	INFINEON	获取价格	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)
IRHN9150A	INFINEON	获取价格	Power Field-Effect Transistor,
IRHN9150D	INFINEON	获取价格	Power Field-Effect Transistor,
IRHN9150PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me

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