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IRHN7450

更新时间： 2024-10-31 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
12页 311K
描述
HEXFET TRANSISTOR

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中文翻译

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IRHN7450 技术参数

是否Rohs认证：不符合生命周期：Active
包装说明：HERMETIC SEALED, CERAMIC, SMD-1, 3 PINReach Compliance Code：compliant
风险等级：5.13Is Samacsys：N
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W最大脉冲漏极电流 (IDM)：44 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHN7450 数据手册

 浏览型号IRHN7450的Datasheet PDF文件第2页浏览型号IRHN7450的Datasheet PDF文件第3页浏览型号IRHN7450的Datasheet PDF文件第4页浏览型号IRHN7450的Datasheet PDF文件第5页浏览型号IRHN7450的Datasheet PDF文件第6页浏览型号IRHN7450的Datasheet PDF文件第7页 
PD - 90819A  
IRHN7450  
IRHN8450  
JANSR2N7270U  
JANSH2N7270U  
N CHANNEL  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
MEGA RAD HARD  
Product Summary  
500Volt, 0.45Ω, MEGA RAD HARD HEXFET  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage  
stability and breakdown voltage stability at total  
radiaition doses as high as 1x106 Rads(Si). Under  
identical pre- and post-irradiation test conditions, In-  
ternational Rectifier’s RAD HARD HEXFETs retain  
identical electrical specifications up to 1 x 105 Rads  
(Si) total dose. No compensation in gate drive circuitry  
is required. These devices are also capable of surviv-  
ing transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few  
microseconds. Since the RAD HARD process utilizes  
International Rectifier’s patented HEXFET technology,  
the user can expect the highest quality and reliability  
in the industry.  
Part Number  
IRHN7450  
IRHN8450  
BVDSS  
500V  
500V  
RDS(on)  
0.45Ω  
0.45Ω  
ID  
11A  
11A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
Surface Mount  
Light Weight  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy  
pulse circuits in space and weapons environments.  
Pre-Irradiation  
Absolute Maximum Ratings   
Parameter  
IRHN7450, IRHN8450  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
11  
D
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
7.0  
GS  
C
I
Pulsed Drain Current ‚  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
44  
DM  
@ T = 25°C  
P
D
150  
1.2  
W
W/°C  
V
C
V
±20  
500  
11  
GS  
E
Single Pulse Avalanche Energy ƒ  
Avalanche Current ‚  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy‚  
Peak Diode Recovery dv/dt „  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
2.6 (typical)  
www.irf.com  
1
02/01/99  
1234567...12

中文翻译

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