Datasheet > IRHN7054D

IRHN7054D

更新时间： 2024-10-30 20:03:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	240K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IRHN7054D 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

IRHN7054D 数据手册

PD-90884E

IRHN7054

JANSR2N7394U

60V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

Product Summary

Part Number

IRHN7054

IRHN3054

IRHN4054

IRHN8054

Radiation Level

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

RDS(on)

I_D

QPL Part Number

JANSR2N7394U

JANSF2N7394U

JANSG2N7394U

JANSH2N7394U

35A

0.027

0.040

SMD-1

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic package

IR HiRel RAD-Hard HEXFETtechnology provides high performance

power MOSFETs for space applications. This technology

has over a decade of proven performance and reliability in

satellite applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low Rdson and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

140

150

1.2

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

500

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

3.5

-55 to + 150

T_STG

°C

300 (5 sec)

2.6 (Typical)

Weight

For Footnotes, refer to the page 2.

2016-06-30

12 3 4 5 6 7 8

中文翻译

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与IRHN7054D相关器件

型号	品牌	获取价格	描述	数据表
IRHN7054PBF	INFINEON	获取价格	暂无描述
IRHN7130	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
IRHN7150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN7230	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
IRHN7250	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
IRHN7250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN7250SCS	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN7250SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN7250SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRHN7250SESCS	INFINEON	获取价格	Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)

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