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IRHN7230

更新时间： 2024-11-03 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
14页 458K
描述
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)

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中文翻译

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IRHN7230 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, CERAMIC, SMD1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.25
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：330 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.49 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：40 W最大脉冲漏极电流 (IDM)：36 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHN7230 数据手册

 浏览型号IRHN7230的Datasheet PDF文件第2页浏览型号IRHN7230的Datasheet PDF文件第3页浏览型号IRHN7230的Datasheet PDF文件第4页浏览型号IRHN7230的Datasheet PDF文件第5页浏览型号IRHN7230的Datasheet PDF文件第6页浏览型号IRHN7230的Datasheet PDF文件第7页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisionl DatSheet No. PD-9.822A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN7230  
IRHN8230  
N-CHANNEL  
MEGA RAD HARD  
Product Summary  
200 Volt, 0.40Ω, MEGARAD HARD HEXFET  
Part Number  
IRHN7230  
BVDSS  
200V  
RDS(on)  
0.40Ω  
0.40Ω  
ID  
International Rectifier’s MEGA RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage sta-  
bility and breakdown voltage stability at total radiation  
doses as high as 1 x 106 Rads (Si). Under identical pre-  
and post-radiation test conditions, International Rectifier’s  
9.0A  
9.0A  
IRHN8230  
200V  
RAD HARD HEXFETs retain identical electrical specifi- Features:  
cations up to 1 x 105 Rads (Si) total dose.At 1 x 106 Rads  
(Si) total dose, under the same pre-dose conditions, only  
minor shifts in the electrical specifications are observed  
and are so specified in table 1. No compensation in gate  
drive circuitry is required. In addition, these devices are  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal operation  
within a few microseconds. Single Event Effect (SEE)  
testing of International Rectifier RAD HARD HEXFETs  
has demonstrated virtual immunity to SEE failure. Since  
the MEGA RAD HARD process utilizes International  
Rectifier’s patented HEXFET technology, the user can  
expect the highest quality and reliability in the industry.  
■ Radiation Hardened up to 1 x 106 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Light-weight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers, au-  
dio amplifiers and high-energy pulse circuits in space and  
weapons environments.  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
IRHN7230, IRHN8230  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
9.0  
D
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
6.0  
GS  
C
I
Pulsed Drain Current ➀  
36  
DM  
@ T = 25°C  
P
Max. Power Dissipation  
75  
0.60  
W
W/K ➄  
V
D
C
Linear Derating Factor  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
330 (see fig. 29)  
9.0  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
5.0 (see fig. 30)  
-55 to 150  
V/ns  
T
J
oC  
g
T
Storage Temperature Range  
Package Mounting Surface Temperature  
STG  
(for 5 seconds)  
2.6 (typical)  
300  
Weight  
To Order  
 
 
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