型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN7130 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) | |
IRHN7150 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN7230 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) | |
IRHN7250 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A) | |
IRHN7250PBF | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN7250SCS | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN7250SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN7250SEPBF | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me | |
IRHN7250SESCS | INFINEON |
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Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) | |
IRHN7254SE | INFINEON |
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Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met |