IRHN7250SCS

更新时间： 2024-11-18 12:59:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
14页	534K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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Provisional Data Sheet PD 9.679C

IRHN7250

IRHN8250

N-CHANNEL

MEGA RAD HARD

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

Product Summary

200 Volt, 0.10Ω, MEGA RAD HARD HEXFET

International Rectifier’s MEGA RAD HARD technology

HEXFET power MOSFETs demonstrate excellent

threshold voltage stability and breakdown voltage sta-

bility at total radiation doses as high as 1 x 10⁶Rads

(Si). Under identical pre- and post-radiation test con-

ditions, International Rectifier’s RAD HARD HEXFETs

retain identical electrical specifications up to 1 x 10⁵

Rads (Si) total dose. At 1 x 10⁶Rads (Si) total dose,

under the same pre-dose conditions, only minor shifts

in the electrical specifications are observed and are so

specified in table 1. No compensation in gate drive cir-

cuitry is required. In addition, these devices are capable

of surviving transient ionization pulses as high as 1 x

10¹²Rads (Si)/Sec, and return to normal operation within

a few microseconds. Single Event Effect (SEE) testing

of International Rectifier RAD HARD HEXFETs has dem-

onstrated virtual immunity to SEE failure. Since the

MEGA RAD HARD process utilizes International

Rectifier’s patented HEXFET technology, the user can

expect the highest quality and reliability in the industry.

Part Number

IRHN7250

IRHN8250

BVDSS

200V

RDS(on)

0.10Ω

26A

200V

Features:

■ Radiation Hardened up to 1 x 10⁶Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, au-

dio amplifiers and high-energy pulse circuits in space

and weapons environments.

Absolute Maximum Ratings

Pre-Radiation

Parameter

IRHN7250, IRHN8250

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

104

@ T = 25°C

150

W/K ➄

Linear Derating Factor

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

5.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 sec.)

Package Mounting Surface Temperature

Weight

300

2.6 (typical)

F-347

To Order

12 3 4 5 6 7...14

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与IRHN7250SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHN7250SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN7250SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRHN7250SESCS	INFINEON	获取价格	Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)
IRHN7254SE	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHN7254SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHN7450	INFINEON	获取价格	HEXFET TRANSISTOR
IRHN7450PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRHN7450SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
IRHN7450SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)
IRHN7C50SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

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