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IRHN7130

更新时间: 2024-10-29 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
14页 453K
描述
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)

IRHN7130 数据手册

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Previous Datasheet  
Index  
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Provisional Data Sheet No. PD-9.821A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN7130  
IRHN8130  
N-CHANNEL  
MEGA RAD HARD  
Product Summary  
100 Volt, 0.18, MEGA RAD HARD HEXFET  
Part Number  
IRHN7130  
BVDSS  
100V  
RDS(on)  
0.18Ω  
0.18Ω  
ID  
14  
14  
International Rectifier’s MEGA RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage sta-  
bility and breakdown voltage stability at total radiation  
doses as high as 1 x 106 Rads (Si). Under identical pre-  
and post-radiation test conditions, International Rectifier’s  
IRHN8130  
100V  
RAD HARD HEXFETs retain identical electrical specifi- Features:  
cations up to 1 x 105 Rads (Si) total dose.At 1 x 106 Rads  
(Si) total dose, under the same pre-dose conditions, only  
minor shifts in the electrical specifications are observed  
and are so specified in table 1. No compensation in gate  
drive circuitry is required. In addition, these devices are  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal operation  
within a few microseconds. Single Event Effect (SEE)  
testing of International Rectifier RAD HARD HEXFETs  
has demonstrated virtual immunity to SEE failure. Since  
the MEGA RAD HARD process utilizes International  
Rectifier’s patented HEXFET technology, the user can  
expect the highest quality and reliability in the industry.  
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Light-weight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers, au-  
dio amplifiers and high-energy pulse circuits in space and  
weapons environments.  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
IRHN7130, IRHN8130  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
14  
D
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
9.0  
GS  
C
I
Pulsed Drain Current ➀  
56  
DM  
@ T = 25°C  
P
Max. Power Dissipation  
75  
0.60  
W
W/K ➄  
V
D
C
Linear Derating Factor  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
160 (see fig. 29)  
14  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
5.5 (see fig. 30)  
-55 to 150  
V/ns  
T
J
oC  
g
T
Storage Temperature Range  
Package Mounting Surface Temperature  
STG  
(for 5 sec.)  
300  
Weight  
2.6 (typical)  
To Order  
 
 

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