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Provisional Data Sheet No. PD-9.821A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7130
IRHN8130
N-CHANNEL
MEGA RAD HARD
Product Summary
100 Volt, 0.18Ω, MEGA RAD HARD HEXFET
Part Number
IRHN7130
BVDSS
100V
RDS(on)
0.18Ω
0.18Ω
ID
14
14
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 106 Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
IRHN8130
100V
RAD HARD HEXFETs retain identical electrical specifi- Features:
cations up to 1 x 105 Rads (Si) total dose.At 1 x 106 Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
■ Radiation Hardened up to 1 x 106 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRHN7130, IRHN8130
Units
I
@ V
= 12V, T = 25°C Continuous Drain Current
14
D
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
9.0
GS
C
I
Pulsed Drain Current ➀
56
DM
@ T = 25°C
P
Max. Power Dissipation
75
0.60
W
W/K ➄
V
D
C
Linear Derating Factor
V
GS
Gate-to-Source Voltage
±20
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
160 (see fig. 29)
14
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
7.5
mJ
AR
dv/dt
5.5 (see fig. 30)
-55 to 150
V/ns
T
J
oC
g
T
Storage Temperature Range
Package Mounting Surface Temperature
STG
(for 5 sec.)
300
Weight
2.6 (typical)
To Order