是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 23 A |
最大漏源导通电阻: | 0.12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN7254SEPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN7450 | INFINEON |
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HEXFET TRANSISTOR | |
IRHN7450PBF | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHN7450SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A) | |
IRHN7450SESCS | INFINEON |
获取价格 |
Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) | |
IRHN7C50SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) | |
IRHN7C50SEPBF | INFINEON |
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Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Me | |
IRHN8054 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN8130 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) | |
IRHN8130PBF | INFINEON |
获取价格 |
暂无描述 |