Datasheet > IRHN7250SESCS

IRHN7250SESCS

更新时间： 2024-11-19 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	857K
描述
Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QIRL

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IRHN7250SESCS 数据手册

IRHN7250SE

PD-91780C

Radiation Hardened Power MOSFET

Surface Mount (SMD-1)

200V, N-channel, Rad Hard HEXFET™ Technology

Features

Product Summary

•

Single event effect (SEE) hardened

Ultra low R_DS(on)

•

Part number: IRHN7250SE

Radiation level: 100 krads (Si)

R_DS(on),max: 0.10Ω

Low total gate charge

Proton tolerant

I_D: 26A

Simple drive requirements

Hermetically sealed

Surface mount

Light weight

ESD rating: Class 3A per MIL-STD-750, Method 1020

SMD-1

Potential Applications

•

DC-DC converter

Motor drives

Solid state relays

Product Validation

Qualified to IR HiRel’s S-level screening flow which is equivalent to MIL-PRF-19500

Description

IRHN7250SE is part of the IR HiRel family of products. IR HiRel rad hard HEXFET technology provides high

performance power MOSFETs for space applications. This technology has over a decade of proven performance

and reliability in satellite applications. These devices have been characterized for both Total Dose and Single

Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor control. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Ordering options

Package

Part number

IRHN7250SE

Screening Level

COTS

TID Level

SMD-1

100krad(Si)

IRHN7250SESCS

SMD-1

S-Level

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2021-06-09

12 3 4 5 6 7...13

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