IRHN7054

更新时间： 2024-09-13 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	126K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

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IRHN7054 数据手册

PD-90884D

IRHN7054

JANSR2N7394U

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

60V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level

RDS(on)

QPL Part Number

IRHN7054

IRHN3054

100K Rads (Si) 0.027Ω 35A JANSR2N7394U

300K Rads (Si) 0.027Ω 35A JANSF2N7394U

IRHN4054

IRHN8054

500K Rads (Si) 0.027Ω 35A JANSG2N7394U

1000K Rads (Si) 0.040Ω 35A JANSH2N7394U

SMD-1

International Rectifier’s RAD-Hard^TMHEXFET^®

technology provides high performance power

MOSFETs for space applications. This technology

has over a decade of proven performance and

reliability in satellite applications. These devices have

been characterized for both Total Dose and Single

Event Effects (SEE). The combination of low Rdson

and low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Surface Mount

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

283

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

300 (5sec)

Package Mounting Surface Temperature

Weight

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

05/15/06

12 3 4 5 6 7 8

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