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IRHN3230

更新时间： 2024-09-13 21:02:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 438K
描述
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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IRHN3230 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：CHIP CARRIER, R-CBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.38
雪崩能效等级（Eas）：330 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：9 A最大漏极电流 (ID)：9 A
最大漏源导通电阻：0.49 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：75 W
最大脉冲漏极电流 (IDM)：36 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHN3230 数据手册

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RAD  
                                                                      
                                                                        
                                                                        
                                                                           
                                                                           
                                                                               
Har  
                                                                               
                                                                                 
                                                                                 
                                                                                   
                                                                                   
                                                                                    
                                                                                    
                                                                                        
H
                                                                                        
                                                                                           
EXFET  
                                                                                           
                                                                                             
                                                                                             
                                                                                               
                                                                                               
                                                                                                 
                                                                                                 
                                                                                                    
                                                                                                    
                                                                                                        
TECHNOLOGY  
                                                                                                        
                                                                                                          
                                                                                                          
                                                                                                             
                                                                                                             
                                                                                                               
                                                                                                               
                                                                                                                  
                                                                                                                  
                                                                                                                    
                                                                                                                    
                                                                                                                       
                                                                                                                       
                                                                                                                         
                                                                                                                         
                                                                                                                           
                                                                                                                           
                                                                                                                              
                                                                                                                              
                                                                                                
                                                                                                  
                                                                                                    
                                                                                                      
                                                                                                       
                                                                                                         
                                                                                                           
                                                                                                             
                                                                                                               
Absolute Maximum Ratings  
Parameter  
                                                                                                                               
                                                                                                                               
                                                                                                                                 
                                                                                                                                 
                                                                                                                                   
                                                                                                                                   
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                       
                                                                                                                                       
                                                                                                                                         
                                                                                                                                         
                                                                                                                                          
                                                                                                                                          
                                                                                                                                            
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
                                                                                                                               
                                                                                                                                 
                                                                                                                                   
                                                                                                                                     
                                                                                                                                      
                                                                                                                                       
                                                                                                                                         
                                                                                                                                          
                                                                                                                                            
                                                                                                                                              
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                     
PD - 90822C  
IRHN7230  
200V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
®
™
d
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHN7230  
IRHN3230  
IRHN4230  
IRHN8230  
100K Rads (Si) 0.40Ω  
300K Rads (Si) 0.40Ω  
600K Rads (Si) 0.40Ω  
1000K Rads (Si) 0.40Ω  
9.0A  
9.0A  
9.0A  
9.0A  
SMD-1  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
9.0  
6.0  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
36  
DM  
P
D
@ T = 25°C  
C
75  
W
W/°C  
V
0.60  
±20  
V
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
330  
mJ  
A
AS  
I
9.0  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
Package Mounting Surface Temperature  
Weight  
300 ( for 5s)  
2.6 (Typical )  
g
For footnotes refer to the last page  
www.irf.com  
1
8/10/01  
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