型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN4130 | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHN4150 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN4250 | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN4250PBF | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN450 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT | |
IRHN57250SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN57250SEPBF | INFINEON |
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暂无描述 | |
IRHN57250SESCS | INFINEON |
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Rad hard, 200V, 31A, single, N-channel MOSFET, R5 in a SMD-1 package - SMD-1, 100 krad(Si) | |
IRHN7054 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN7054D | INFINEON |
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Power Field-Effect Transistor, |