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IRHN4250PBF PDF预览

IRHN4250PBF

更新时间: 2024-10-30 20:01:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 297K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

IRHN4250PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-CBCC-N3Reach Compliance Code:compliant
风险等级:5.72雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):26 A
最大漏源导通电阻:0.11 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):104 A表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHN4250PBF 数据手册

 浏览型号IRHN4250PBF的Datasheet PDF文件第2页浏览型号IRHN4250PBF的Datasheet PDF文件第3页浏览型号IRHN4250PBF的Datasheet PDF文件第4页浏览型号IRHN4250PBF的Datasheet PDF文件第5页浏览型号IRHN4250PBF的Datasheet PDF文件第6页浏览型号IRHN4250PBF的Datasheet PDF文件第7页 
PD - 90679G  
IRHN7250  
JANSR2N7269U  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
200V, N-CHANNEL  
REF:MIL-PRF-19500/603  
RAD-HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number  
IRHN7250  
IRHN3250  
IRHN4250  
IRHN8250  
Radiation Level  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
1000K Rads (Si)  
RDS(on)  
0.1Ω  
0.1Ω  
0.1Ω  
0.1Ω  
ID  
QPL Part Number  
26A JANSR2N7269U  
26A JANSF2N7269U  
26A JANSG2N7269U  
26A JANSH2N7269U  
SMD-1  
International Rectifier’s RAD-HardTM HEXFET®  
technology provides high performance power  
MOSFETs for space applications. This technology  
has over a decade of proven performance and  
reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single  
Event Effects (SEE). The combination of low Rds(on)  
and low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
26  
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16  
104  
D
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
26  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (for 5 sec)  
2.6 (Typical)  
Package Mounting Surface Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
05/15/06  

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