是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 300 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 31 A |
最大漏极电流 (ID): | 31 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 124 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN57250SEPBF | INFINEON |
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暂无描述 | |
IRHN57250SESCS | INFINEON |
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Rad hard, 200V, 31A, single, N-channel MOSFET, R5 in a SMD-1 package - SMD-1, 100 krad(Si) | |
IRHN7054 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN7054D | INFINEON |
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Power Field-Effect Transistor, | |
IRHN7054PBF | INFINEON |
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暂无描述 | |
IRHN7130 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) | |
IRHN7150 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN7230 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) | |
IRHN7250 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A) | |
IRHN7250PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |