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IRHN57250SE PDF预览

IRHN57250SE

更新时间: 2024-10-30 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 176K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

IRHN57250SE 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC, SMD-1, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
Is Samacsys:N雪崩能效等级(Eas):300 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):31 A
最大漏极电流 (ID):31 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):124 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHN57250SE 数据手册

 浏览型号IRHN57250SE的Datasheet PDF文件第2页浏览型号IRHN57250SE的Datasheet PDF文件第3页浏览型号IRHN57250SE的Datasheet PDF文件第4页浏览型号IRHN57250SE的Datasheet PDF文件第5页浏览型号IRHN57250SE的Datasheet PDF文件第6页浏览型号IRHN57250SE的Datasheet PDF文件第7页 
                                                                         
PD - 94236B  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
IRHN57250SE  
200V, N-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHN57250SE 100K Rads (Si)  
0.0631A  
SMD-1  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
31  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
19  
124  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
Linear Derating Factor  
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
300  
mJ  
A
AS  
I
31  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
7.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
2.6(Typical)  
For footnotes refer to the last page  
www.irf.com  
1
08/24/04  

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