是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 26 A | 最大漏极电流 (ID): | 26 A |
最大漏源导通电阻: | 0.11 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 104 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN4250PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN450 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT | |
IRHN57250SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN57250SEPBF | INFINEON |
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暂无描述 | |
IRHN57250SESCS | INFINEON |
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Rad hard, 200V, 31A, single, N-channel MOSFET, R5 in a SMD-1 package - SMD-1, 100 krad(Si) | |
IRHN7054 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN7054D | INFINEON |
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Power Field-Effect Transistor, | |
IRHN7054PBF | INFINEON |
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暂无描述 | |
IRHN7130 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) | |
IRHN7150 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |