5秒后页面跳转
捷配首页

Datasheet > IRHN4054
IRHN4054 PDF预览

IRHN4054

更新时间： 2024-10-30 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 126K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

阅读下载

中文翻译

获取价格

IRHN4054 数据手册

 浏览型号IRHN4054的Datasheet PDF文件第2页浏览型号IRHN4054的Datasheet PDF文件第3页浏览型号IRHN4054的Datasheet PDF文件第4页浏览型号IRHN4054的Datasheet PDF文件第5页浏览型号IRHN4054的Datasheet PDF文件第6页浏览型号IRHN4054的Datasheet PDF文件第7页 
PD-90884D  
IRHN7054  
JANSR2N7394U  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
60V, N-CHANNEL  
REF: MIL-PRF-19500/603  
RAD-Hard™HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level  
RDS(on)  
ID  
QPL Part Number  
IRHN7054  
IRHN3054  
100K Rads (Si) 0.027Ω 35A JANSR2N7394U  
300K Rads (Si) 0.027Ω 35A JANSF2N7394U  
IRHN4054  
IRHN8054  
500K Rads (Si) 0.027Ω 35A JANSG2N7394U  
1000K Rads (Si) 0.040Ω 35A JANSH2N7394U  
SMD-1  
International Rectifier’s RAD-HardTM HEXFET®  
technology provides high performance power  
MOSFETs for space applications. This technology  
has over a decade of proven performance and  
reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single  
Event Effects (SEE). The combination of low Rdson  
and low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
35  
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
30  
283  
D
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (5sec)  
Package Mounting Surface Temperature  
Weight  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/15/06  
12345678

中文翻译

下载PDF

与IRHN4054相关器件

型号 品牌 获取价格 描述 数据表
IRHN4054PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4130 INFINEON

获取价格

 		Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4150 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN4250 INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN4250PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN450 ETC

获取价格

 		TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT
IRHN57250SE INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN57250SEPBF INFINEON

获取价格

 		暂无描述
IRHN57250SESCS INFINEON

获取价格

 		Rad hard, 200V, 31A, single, N-channel MOSFET, R5 in a SMD-1 package - SMD-1, 100 krad(Si)
IRHN7054 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

与IRHN4054相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证