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IRHN3450 PDF预览

IRHN3450

更新时间: 2024-10-30 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 653K
描述
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN

IRHN3450 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC, SMD-1, 3 PINReach Compliance Code:compliant
风险等级:5.38Is Samacsys:N
其他特性:RADIATION HARDENED雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHN3450 数据手册

 浏览型号IRHN3450的Datasheet PDF文件第2页浏览型号IRHN3450的Datasheet PDF文件第3页浏览型号IRHN3450的Datasheet PDF文件第4页浏览型号IRHN3450的Datasheet PDF文件第5页浏览型号IRHN3450的Datasheet PDF文件第6页浏览型号IRHN3450的Datasheet PDF文件第7页 
PD - 90819B  
IRHN7450  
JANSR2N7270U  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
500V, N-CHANNEL  
REF: MIL-PRF-19500/603  
RAD-HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHN7450  
IRHN3450  
IRHN4450  
IRHN8450  
100K Rads (Si) 0.45Ω  
300K Rads (Si) 0.45Ω  
500K Rads (Si) 0.45Ω  
1000K Rads (Si) 0.45Ω  
11A JANSR2N7270U  
11A JANSF2N7270U  
11A JANSG2N7270U  
11A JANSH2N7270U  
SMD-1  
International Rectifier’s RAD-HardTM HEXFET®technology  
provides high performance power MOSFETs for space  
applications. This technology has over a decade of  
proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low Rdson and low gate charge reduces  
the power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
11  
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
7.0  
44  
D
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
11  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
PCKG. Mounting Surface Temp.  
Weight  
300 (for 5s)  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/18/06  

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