IRHN3150

更新时间： 2024-11-17 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	286K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

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IRHN3150 数据手册

PD - 90720C

IRHN7150

JANSR2N7268U

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

100V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHN7150

IRHN3150

IRHN4150

IRHN8150

100K Rads (Si) 0.065Ω

300K Rads (Si) 0.065Ω

600K Rads (Si) 0.065Ω

1000K Rads (Si) 0.065Ω

34A JANSR2N7268U

34A JANSF2N7268U

34A JANSG2N7268U

34A JANSH2N7268U

SMD-1

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

136

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

PCKG. Mounting Surface Temp.

Weight

300 ( for 5s)

2.6 (Typical )

For footnotes refer to the last page

www.irf.com

02/01/01

12 3 4 5 6 7...12

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与IRHN3150相关器件

型号	品牌	获取价格	描述	数据表
IRHN3230	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta
IRHN3250	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN3250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN3450	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4054	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN4054PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4130	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN4250	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN4250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met

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