Datasheet > IRHN3054PBF

IRHN3054PBF

更新时间： 2024-10-30 21:16:47

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	247K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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IRHN3054PBF 数据手册

RAD

Hard

HEXFE

T^®

TECHNOLOGY

Absolute Maximum Ratings

Parameter

PD - 90884B

IRHN7054

JANSR2N7394U

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

REF: MIL-PRF-19500/603

Product Summary

Part Number Radiation Level RDS(on) ID

QPL Part Number

IRHN7054

IRHN3054

100K Rads (Si)

300K Rads (Si)

0.027Ω 35A JANSR2N7394U

0.027Ω 35A JANSF2N7394U

IRHN4054

IRHN8054

600K Rads (Si)

0.027Ω 35A JANSG2N7394U

1000K Rads (Si) 0.027Ω 35A JANSH2N7394U

SMD-1

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Surface Mount

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

283

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

300 (5sec)

Package Mounting Surface Temperature

Weight

2.6 (Typical )

For footnotes refer to the last page

www.irf.com

8/9/01

12 3 4 5 6 7 8

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与IRHN3054PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHN3130	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHN3150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN3230	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta
IRHN3250	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN3250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN3450	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4054	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN4054PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4130	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHN4150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

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