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IRHN3054

更新时间： 2024-11-18 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 126K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

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中文翻译

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IRHN3054 数据手册

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PD-90884D  
IRHN7054  
JANSR2N7394U  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
60V, N-CHANNEL  
REF: MIL-PRF-19500/603  
RAD-Hard™HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level  
RDS(on)  
ID  
QPL Part Number  
IRHN7054  
IRHN3054  
100K Rads (Si) 0.027Ω 35A JANSR2N7394U  
300K Rads (Si) 0.027Ω 35A JANSF2N7394U  
IRHN4054  
IRHN8054  
500K Rads (Si) 0.027Ω 35A JANSG2N7394U  
1000K Rads (Si) 0.040Ω 35A JANSH2N7394U  
SMD-1  
International Rectifier’s RAD-HardTM HEXFET®  
technology provides high performance power  
MOSFETs for space applications. This technology  
has over a decade of proven performance and  
reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single  
Event Effects (SEE). The combination of low Rdson  
and low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
35  
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
30  
283  
D
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (5sec)  
Package Mounting Surface Temperature  
Weight  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/15/06  
12345678

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