型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN2C50SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) | |
IRHN2C50SEPBF | INFINEON |
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暂无描述 | |
IRHN3054 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN3054PBF | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHN3130 | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHN3150 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN3230 | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHN3250 | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN3250PBF | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHN3450 | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta |