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IRHN2C50SE

更新时间： 2024-11-17 22:29:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 87K
描述
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

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IRHN2C50SE 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.92
配置：Single最大漏极电流 (Abs) (ID)：10.4 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

IRHN2C50SE 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1476A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN2C50SE  
IRHN7C50SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET  
BVDSS  
RDS(on)  
ID  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the SEE pro-  
IRHN2C50SE  
600V  
0.60Ω  
10.4A  
IRHN7C50SE  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
cess utilizes International Rectifier’s patented HEXFET ■ Gamma Dot (Flash X-Ray) Hardened  
technology, the user can expect the highest quality  
■ Neutron Tolerant  
and reliability in the industry.  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Light-Weight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHN2C50SE, IRHN7C50SE Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
10.4  
GS  
C
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
6.5  
41.6  
150  
A
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
W
W/K ➄  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
AS  
I
10.4  
15  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
mJ  
AR  
dv/dt  
3.0  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
STG  
oC  
g
(for 5 seconds)  
2.6 (typical)  
Package Mounting Surface Temperature  
Weight  
300  
To Order  
 
 
1234

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