是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FULL PACK-3 | Reach Compliance Code: | unknown |
风险等级: | 5.29 | 其他特性: | ULTRAFAST; HIGH SPEED |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 11.5 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 180 ns |
标称接通时间 (ton): | 54 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG41BC20KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, FULL PACK-3 | |
IRG41BC30UD | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-220FP | |
IRG4BAC50S | ETC |
获取价格 |
||
IRG4BAC50SPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220 | |
IRG4BAC50U | ETC |
获取价格 |
||
IRG4BAC50W | ETC |
获取价格 |
||
IRG4BAC50WPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220 | |
IRG4BC10K | INFINEON |
获取价格 |
Short Circuit Rated UltraFast IGBT | |
IRG4BC10KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ | |
IRG4BC10KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |