Datasheet > IRG4BAC50W

IRG4BAC50W

更新时间： 2024-09-14 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制瞄准线
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8页	165K
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中文翻译

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数据手册

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IRG4BAC50W 数据手册

PD -93769

PROVISIONAL

IRG4BAC50W

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Designed expressly for switch-mode power

supply and PFC (power factor correction)

applications

V_CES= 600V

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of E_offparameter

V_{CE(on) max.}= 2.30V

@V_GE= 15V, I_C= 27A

• Low IGBT conduction losses

• Latest generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

N-channel

Benefits

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >300kHz)

Super-220™

(TO-273AA)

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

220

I_LM

220

V_GE

± 20

170

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.64

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.50

–––

°C/W

TBD

–––

g (oz)

www.irf.com

1/19/2000

12 3 4 5 6 7 8

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