Datasheet > 晶体管 > IGBT> IRG4BC10SD-S

IRG4BC10SD-S

更新时间： 2024-09-14 22:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
12页	218K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

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中文翻译

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数据手册
替代型号

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IRG4BC10SD-S 数据手册

PD - 94255

IRG4BC10SD-S

IRG4BC10SD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Standard Speed

CoPack IGBT

Features

• Extremely low voltage drop 1.1Vtyp. @ 2A

• S-Series: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

KHz in brushless DC drives.

V_CES= 600V

_{CE(on) typ.}= 1.10V

• Very Tight Vce(on) distribution

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

@V_GE= 15V, I_C= 2.0A

• Industry standard D²Pak & TO-262 packages

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Lower losses than MOSFET's conduction and

Diode losses

D²Pak

IRG4BC10SD-S

TO-262

IRG4BC10SD-L

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

I_F@ T_C= 100°C

4.0

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

–––

Typ.

–––

Max.

3.3

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - Diode

–––

7.0

°C/W

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount ꢀ

0.50

–––

Junction-to-Ambient (PCB Mount, steady state) –––

Weight –––

–––

2.0(0.07)

–––

g (oz)

www.irf.com

06/12/01

12 3 4 5 6 7...12

中文翻译

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IRG4BC10SD-S 替代型号

型号	品牌	替代类型	描述	数据表
IRG4BC10SD-SPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRG4BC10SD-S相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC10SD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC10SD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC10SD-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC10SD-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC10SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT
IRG4BC15MD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15MDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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