Datasheet > 晶体管 > IGBT> IRG4BC10S

IRG4BC10S

更新时间： 2024-09-14 22:33:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管双极性晶体管栅
页数	文件大小	规格书
8页	157K
描述
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4BC10S 数据手册

PD - 91786A

IRG4BC10S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Extremely low voltage drop; 1.1V typical at 2A

• S-Speed: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

KHz in brushless DC drives, up to 2KHz in

V_CES= 600V

V_{CE(on) typ.}= 1.10V

@V_GE= 15V, I_C= 2.0A

Chopper Applications

• Very Tight Vce(on) distribution

• Industry standard TO-220AB package

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency

available

• IGBTs optimized for specified application conditions

• Lower conduction losses than many Power

MOSFET''s

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

110

P_DT_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.5

–––

°C/W

–––

2.0(0.07)

–––

g (oz)

www.irf.com

4/24/2000

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRG4BC10S相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC10SD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-L	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10SD-LPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-LTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3
IRG4BC10SD-LTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3
IRG4BC10SDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10SD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC10SD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,