Datasheet > 晶体管 > IGBT> IRG4BC10SD

IRG4BC10SD

更新时间： 2024-09-15 03:44:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	314K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

获取价格

数据手册

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IRG4BC10SD 数据手册

PD -91784B

IRG4BC10SD

Standard Speed CoPack

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

IGBT

• Extremely low voltage drop 1.1Vtyp. @ 2A

• S-Series: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

KHz in brushless DC drives.

V_CES= 600V

V_{CE(on) typ.}= 1.10V

• Very Tight Vce(on) distribution

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

@V_GE= 15V, I_C= 2.0A

n-channel

• Industry standard TO-220AB package

Benefits

• Generation 4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Lower losses than MOSFET's conduction and

Diode losses

TO-220AB

Max.

Absolute Maximum Ratings

Parameter

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

I_F@ T_C= 100°C

4.0

I_FM

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

3.3

7.0

Units

R_θJC

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

R_θJC

°C/W

R_θCS

0.50

–––

R_θJA

–––

2.0(0.07)

–––

g (oz)

www.irf.com

07/04/07

12 3 4 5 6 7...10

中文翻译

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与IRG4BC10SD相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC10SD-L	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10SD-LPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-LTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3
IRG4BC10SD-LTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3
IRG4BC10SDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10SD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC10SD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC10SD-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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