Datasheet > 晶体管 > IGBT> IRG4BC10K

IRG4BC10K

更新时间： 2024-09-14 22:33:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关电动机控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	158K
描述
Short Circuit Rated UltraFast IGBT

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中文翻译

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数据手册

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IRG4BC10K 数据手册

PD - 91733A

IRG4BC10K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, V_GE= 15V

V_CES= 600V

• Generation 4 IGBT design provides higher efficiency

than Generation 3

V_{CE(on) typ.}= 2.39V

• Industry standard TO-220AB package

@V_GE= 15V, I_C= 5.0A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

9.0

I_C@ T_C= 100°C

5.0

I_CM

I_LM

t_sc

µs

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

–––

0.5

Max.

3.3

–––

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

–––

2.0 (0.07)

–––

www.irf.com

4/24/2000

12 3 4 5 6 7 8

中文翻译

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