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IRG4BC10KPBF PDF预览

IRG4BC10KPBF

更新时间： 2024-09-15 20:03:19
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅功率控制晶体管
页数 文件大小 规格书
9页 156K
描述
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

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IRG4BC10KPBF 数据手册

 浏览型号IRG4BC10KPBF的Datasheet PDF文件第2页浏览型号IRG4BC10KPBF的Datasheet PDF文件第3页浏览型号IRG4BC10KPBF的Datasheet PDF文件第4页浏览型号IRG4BC10KPBF的Datasheet PDF文件第5页浏览型号IRG4BC10KPBF的Datasheet PDF文件第6页浏览型号IRG4BC10KPBF的Datasheet PDF文件第7页 
PD - 91733A  
IRG4BC10K  
Short Circuit Rated  
UltraFast IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
Features  
C
• Short Circuit Rated UltraFast: Optimized for high  
operating frequencies >5.0 kHz , and Short Circuit  
Rated to 10µs @ 125°C, VGE = 15V  
VCES = 600V  
• Generation 4 IGBT design provides higher efficiency  
than Generation 3  
VCE(on) typ. = 2.39V  
G
• Industry standard TO-220AB package  
@VGE = 15V, IC = 5.0A  
E
n-channel  
Benefits  
• Generation 4 IGBTs offer highest efficiency available  
• IGBTs optimized for specified application conditions  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
9.0  
IC @ TC = 100°C  
5.0  
A
ICM  
18  
ILM  
18  
tsc  
10  
µs  
V
VGE  
20  
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
34  
mJ  
PD @ TC = 25°C  
38  
15  
W
PD @ TC = 100°C Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
300 (0.063 in. (1.6mm) from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
Typ.  
–––  
0.5  
Max.  
3.3  
–––  
80  
Units  
°C/W  
g (oz)  
RθJC  
RθCS  
RθJA  
Wt  
–––  
2.0 (0.07)  
–––  
www.irf.com  
1
4/24/2000  
1234567...9

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IRG4BC10KPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRG4BC10KDPBF INFINEON

完全替代

 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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IRG4BC10S INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15
IRG4BC10SD INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-L INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10SD-LPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-LTRL INFINEON

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 		Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3
IRG4BC10SD-LTRR INFINEON

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 		Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3
IRG4BC10SDPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-S INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10SD-SPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD-STRL INFINEON

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 		Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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