Datasheet > IRG41BC30UD

IRG41BC30UD

更新时间： 2024-09-14 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管栅
页数	文件大小	规格书
10页	261K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8.9A I(C) \| TO-220FP

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中文翻译

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数据手册

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IRG41BC30UD 数据手册

PD91753A

IRG4IBC30UD

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• 2.5kV, 60s insulation voltage ꢀ

• 4.8 mm creapage distance to heatsink

• UltraFast: Optimized for high operating

V_CES= 600V

V_{CE(on) typ.}= 1.95V

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• IGBT co-packaged with HEXFRED^TMultrafast,

ultrasoft recovery antiparallel diodes

• Tighter parameter distribution

@V_GE= 15V, I_C= 12A

n-channel

• Industry standard Isolated TO-220 Fullpak^TM

outline

Benefits

• Simplified assembly

• Highest efficiency and power density

• HEXFRED^TMantiparallel Diode minimizes

switching losses and EMI

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

RMS Isolation Voltage, Terminal to Caseꢀ

Gate-to-Emitter Voltage

I_C@ T_C= 100°C

8.9

I_CM

I_LM

I_F@ T_C= 100°C

8.5

I_FM

Visol

2500

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

2.8

Units

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient, typical socket mount

Weight

–––

4.1

°C/W

–––

2.0 (0.07)

–––

g (oz)

www.irf.com

7/17/2000

12 3 4 5 6 7...10

中文翻译

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