Datasheet > IRG4BAC50U

IRG4BAC50U

更新时间： 2024-10-31 23:58:55

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描述

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中文翻译

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数据手册

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IRG4BAC50U 数据手册

PD -93770

PROVISIONAL

IRG4BAC50U

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• UltraFast: Optimized for high operating

frequencies 8-40kHz in hard switching, >200

kHz in resonant mode

_CES= 600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

V_{CE(on) typ.}= 1.65V

@V_GE= 15V, I_C= 27A

• Industry Super-220™ (TO-273AA) package

N-channel

Benefits

• Generation 4 IGBT offers highest efficiency available

• Optimized for specified application conditions

Super-220™

(TO-273AA)

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

220

± 20

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

0.5

Max.

0.64

–––

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

–––

TBD

–––

g (oz)

www.irf.com

1/19/2000

12 3 4 5 6 7 8

中文翻译

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