IRFZ44E

更新时间： 2024-11-05 22:08:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	97K
描述
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

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替代型号

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IRFZ44E 数据手册

PD - 91671B

IRFZ44E

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

V_DSS= 60V

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

R_DS(on)= 0.023Ω

I_D= 48A

Description

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design

that HEXFET Power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢀ

192

110

0.71

± 20

220

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

1.4

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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IRFZ44E 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ44EPBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET

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