Datasheet > IRFZ44N

IRFZ44N

更新时间： 2024-11-06 12:20:39

品牌	Logo	应用领域
TGS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
1页	132K
描述
N-Channel Power MOSFET

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IRFZ44N 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

IRFZ44N

N-Channel Power MOSFET

DESCRIPTION

Process has specifically been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary switch in advanced

highefficiency, high-frequency isolated DC-DC converters for Telecom and

Computer applications. It is also intended for any applications with low gate

drive requirements.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Drain-Source Voltage

Drain Current - Continuous

Drain Current - Pulsed

Gate-Source Voltage

Value Unit

V_DSS

I_D

I_DM

V_GSS

P_D

160

Power Dissipation

150

^oC

T_j

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Symbol

Test Conditions

V_GS= 0V, I =250 A

Min.

Typ. Max. Unit

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

—

V_DS=55V, V_GS=0V

V_GS=20V, V_DS=0V

V_GS= -20V, V_DS=0V

—

I_GSSF

I_GSSR

V_GS(th)

R_DS(on)

V_SD

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

4.0

—

Gate Threshold Voltage

V_DS= V_GS, I =250 A

2.0

3.0

Static Drain-Source On-Resistance

Drain-Source Diode Forward Voltage

V_GS= 10 V, I_D= 25 A

V_GS= 0 V, I_S= 25 A

0.0175

1.3

—

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