Datasheet > IRFZ44S_11

IRFZ44S_11

更新时间： 2024-10-30 11:09:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	795K
描述
Power MOSFET

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数据手册

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IRFZ44S_11 数据手册

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRFZ44S, SiHFZ44S)

R_DS(on)()

V_GS= 10 V

0.028

Q_g(Max.) (nC)

•

Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide

variety of applications.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance

in any existing surface mount package. The D²PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

N-Channel MOSFET

The through-hole version (IRFZ44L, SiHFZ44L) is available

for low profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFZ44S-GE3

IRFZ44SPbF

D²PAK (TO-263)

SiHFZ44STRL-GE3^a

IRFZ44STRLPbF^a

SiHFZ44STL-E3^a

I²PAK (TO-262)

IRFZ44LPbF

SiHFZ44L-E3

Lead (Pb)-free and Halogen-free

SiHFZ44STRR-GE3^a

IRFZ44STRRPbF^a

SiHFZ44STR-E3^a

Lead (Pb)-free

SiHFZ44S-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage^f

Gate-Source Voltage^f

SYMBOL

V_DS

LIMIT

UNIT

V_GS

Continuous Drain Current^e

Continuous Drain Current

Pulsed Drain Current^{a, e}

Linear Derating Factor

_C= 25 °C

200

1.0

100

3.7

150

4.5

V_GSat 10 V

I_D

T_C= 100 °C

I_DM

W/°C

Single Pulse Avalanche Energy^b

E_AS

P_D

T_A= 25 °C

T_C= 25 °C

Maximum Power Dissipation

V/ns

°C

Peak Diode Recovery dV/dt^{c, f}

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature^d)

T_J, T_stg

- 55 to + 175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V; starting T_J= 25 °C, L = 44 μH, R_g= 25 , I_AS= 51 A (see fig. 12).

c. I_SD 51 A, dI/dt  250 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Calculated continuous current based on maximum allowable junction temperature.

f. Uses IRFZ44, SiHFZ44 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91293

S11-1063-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFZ44S_11相关器件

型号	品牌	获取价格	描述	数据表
IRFZ44SPBF	VISHAY	获取价格	Power MOSFET
IRFZ44STRL	VISHAY	获取价格	Power MOSFET
IRFZ44STRLPBF	VISHAY	获取价格	Power MOSFET
IRFZ44STRR	VISHAY	获取价格	Power MOSFET
IRFZ44STRRPBF	VISHAY	获取价格	Power MOSFET
IRFZ44V	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A)
IRFZ44V	SUNTAC	获取价格	N-CHANNEL Power MOSFET
IRFZ44VL	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
IRFZ44VLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ44VPBF	INFINEON	获取价格	Ultra Low On-Resistance

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