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IRFZ44S_11 PDF预览

IRFZ44S_11

更新时间: 2024-11-21 11:09:55
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威世 - VISHAY /
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9页 795K
描述
Power MOSFET

IRFZ44S_11 数据手册

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IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Halogen-free According to IEC 61249-2-21  
Definition  
• Advanced Process Technology  
• Surface Mount (IRFZ44S, SiHFZ44S)  
60  
RDS(on) ()  
VGS = 10 V  
0.028  
Qg (Max.) (nC)  
67  
18  
Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)  
• 175 °C Operating Temperature  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
25  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
DESCRIPTION  
Third generation Power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extermely low  
on resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
power MOSFETs are well known for, provides the designer  
with an extermely efficient reliabel deviece for use in a wide  
variety of applications.  
D
D2PAK (TO-263)  
I2PAK (TO-262)  
G
G
D
The D2PAK is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and lowest possible on-resistance  
in any existing surface mount package. The D2PAK is  
suitable for high current applications because of its low  
internal connection resistance and can dissipate up to 2.0 W  
in a typical surface mount application.  
S
D
S
G
S
N-Channel MOSFET  
The through-hole version (IRFZ44L, SiHFZ44L) is available  
for low profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHFZ44S-GE3  
IRFZ44SPbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
SiHFZ44STRL-GE3a  
IRFZ44STRLPbFa  
SiHFZ44STL-E3a  
I2PAK (TO-262)  
-
IRFZ44LPbF  
SiHFZ44L-E3  
Lead (Pb)-free and Halogen-free  
SiHFZ44STRR-GE3a  
IRFZ44STRRPbFa  
SiHFZ44STR-E3a  
Lead (Pb)-free  
SiHFZ44S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltagef  
Gate-Source Voltagef  
SYMBOL  
VDS  
LIMIT  
60  
20  
UNIT  
V
VGS  
Continuous Drain Currente  
Continuous Drain Current  
Pulsed Drain Currenta, e  
Linear Derating Factor  
T
C = 25 °C  
50  
36  
200  
1.0  
100  
3.7  
150  
4.5  
VGS at 10 V  
ID  
A
TC = 100 °C  
IDM  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
EAS  
PD  
TA = 25 °C  
TC = 25 °C  
Maximum Power Dissipation  
W
V/ns  
°C  
Peak Diode Recovery dV/dtc, f  
dV/dt  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperatured)  
TJ, Tstg  
- 55 to + 175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V; starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).  
c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Calculated continuous current based on maximum allowable junction temperature.  
f. Uses IRFZ44, SiHFZ44 data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91293  
S11-1063-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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