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IRFZ44VSPBF

更新时间： 2024-09-15 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 217K
描述
HEXFET Power MOSFET

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中文翻译

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IRFZ44VSPBF 数据手册

 浏览型号IRFZ44VSPBF的Datasheet PDF文件第2页浏览型号IRFZ44VSPBF的Datasheet PDF文件第3页浏览型号IRFZ44VSPBF的Datasheet PDF文件第4页浏览型号IRFZ44VSPBF的Datasheet PDF文件第5页浏览型号IRFZ44VSPBF的Datasheet PDF文件第6页浏览型号IRFZ44VSPBF的Datasheet PDF文件第7页 
PD - 95561  
IRFZ44VSPbF  
IRFZ44VLPbF  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 60V  
l Fully Avalanche Rated  
l Optimized for SMPS Applications  
l Lead-Free  
RDS(on) = 16.5mΩ  
G
ID = 55A  
S
Description  
AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvanced  
processing techniques to achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and ruggedized device  
design that HEXFET power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of accommodating die  
sizes up to HEX-4. It provides the highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The D2Pak is suitable for  
high current applications because of its low internal connection resistance and  
can dissipate up to 2.0W in a typical surface mount application.  
D2Pak  
IRFZ44VS  
TO-262  
IRFZ44VL  
Thethrough-holeversion(IRFZ44VL)isavailableforlow-profileapplications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
55  
39  
A
220  
PD @TC = 25°C  
Power Dissipation  
115  
W
W/°C  
V
Linear Derating Factor  
0.77  
± 20  
115  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
55  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
11  
mJ  
V/ns  
4.5  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.3  
Units  
°C/W  
RθJC  
RθJA  
Junction-to-Ambient  
–––  
40  
www.irf.com  
1
07/15/04  
1234567...10

中文翻译

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IRFZ44VSPBF 替代型号

型号 品牌 替代类型 描述 数据表
STB55NF06T4 STMICROELECTRONICS

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 N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO

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