5秒后页面跳转
IRFZ44VZSTRL PDF预览

IRFZ44VZSTRL

更新时间: 2024-09-14 19:24:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 351K
描述
Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

IRFZ44VZSTRL 数据手册

 浏览型号IRFZ44VZSTRL的Datasheet PDF文件第2页浏览型号IRFZ44VZSTRL的Datasheet PDF文件第3页浏览型号IRFZ44VZSTRL的Datasheet PDF文件第4页浏览型号IRFZ44VZSTRL的Datasheet PDF文件第5页浏览型号IRFZ44VZSTRL的Datasheet PDF文件第6页浏览型号IRFZ44VZSTRL的Datasheet PDF文件第7页 
PD - 95947  
IRFZ44VZPbF  
IRFZ44VZSPbF  
IRFZ44VZLPbF  
AUTOMOTIVE MOSFET  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 60V  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 12mΩ  
G
Description  
ID = 57A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
D2Pak  
TO-220AB  
IRFZ44VZPbF  
TO-262  
IRFZ44VZLPbF  
IRFZ44VZSPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
57  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
40  
230  
92  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.61  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
73  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
110  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.64  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
www.irf.com  
1
11/16/04  

与IRFZ44VZSTRL相关器件

型号 品牌 获取价格 描述 数据表
IRFZ44VZSTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44VZSTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44Z INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)
IRFZ44ZL INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)
IRFZ44ZLPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) =
IRFZ44ZPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) =
IRFZ44ZS INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)
IRFZ44ZSPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) =
IRFZ44ZSTRL INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Me
IRFZ44ZSTRLPBF INFINEON

获取价格

暂无描述