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IRFZ44ZSTRR

更新时间： 2024-09-14 21:19:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 286K
描述
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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IRFZ44ZSTRR 数据手册

 浏览型号IRFZ44ZSTRR的Datasheet PDF文件第2页浏览型号IRFZ44ZSTRR的Datasheet PDF文件第3页浏览型号IRFZ44ZSTRR的Datasheet PDF文件第4页浏览型号IRFZ44ZSTRR的Datasheet PDF文件第5页浏览型号IRFZ44ZSTRR的Datasheet PDF文件第6页浏览型号IRFZ44ZSTRR的Datasheet PDF文件第7页 
PD - 95379  
IRFZ44ZPbF  
AUTOMOTIVE MOSFET  
IRFZ44ZSPbF  
Features  
O
O
O
O
O
O
O
Advanced Process Technology  
IRFZ44ZLPbF  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
HEXFET® Power MOSFET  
D
VDSS = 55V  
RDS(on) = 13.9mΩ  
G
Description  
ID = 51A  
S
Specifically designed for Automotive applica-  
tions,thisHEXFET® PowerMOSFETutilizesthe  
latestprocessingtechniquestoachieveextremely  
low on-resistance per silicon area. Additional  
features of this design are a 175°C junction  
operatingtemperature, fastswitchingspeedand  
improved repetitive avalanche rating . These  
features combine to make this design an ex-  
tremely efficient and reliable device for use in  
Automotive applications and a wide variety of  
other applications.  
D2Pak  
IRFZ44ZS  
TO-262  
IRFZ44ZL  
TO-220AB  
IRFZ44Z  
Absolute Maximum Ratings  
Parameter  
Max.  
51  
Units  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Pulsed Drain Current  
D
D
36  
200  
80  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.53  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
86  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
105  
IAR  
See Fig.12a,12b,15,16  
-55 to + 175  
A
EAR  
mJ  
°C  
Repetitive Avalanche Energy  
T
J
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.87  
–––  
62  
Units  
Rθ  
°C/W  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
06/07/04  
1234567...13

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与IRFZ44ZSTRR相关器件

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IRFZ44ZSTRRPBF INFINEON

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 		Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Me
IRFZ45 SAMSUNG

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IRFZ45-001 INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRFZ45-002 INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRFZ45-002PBF INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRFZ45-003 INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRFZ45-003PBF INFINEON

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 		50A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET
IRFZ45-005 INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRFZ45-006PBF INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRFZ45-009 INFINEON

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 		Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met

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