IRFZ44RPBF

更新时间： 2024-10-30 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	227K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFZ44RPBF 数据手册

PD - 94823

IRFZ44RPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Drop in Replacement of the IRFZ44

for Linear/Audio Applications

l Lead-Free

V_DSS= 60V

R_DS(on)= 0.028Ω

I_D= 50*A

Description

Advanced HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

TheTO-220packageisuniversallypreferredforallcommercial-

industrial applications at power dissipation levels to

approximately 50 watts. The low thermal resistance and low

package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

50*

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

200

P_D@T_C= 25°C

Power Dissipation

150

W/°C

Linear Derating Factor

1.0

V_GS

E_AS

dv/dt

T_J

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

100

4.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.0

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

11/10/03

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